Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Mga Uri ng Semiconductor

Baguhin ang category view
Mga Resulta: 51
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 419May Stock
Min.: 1
Mult.: 1
Max.: 7

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 88May Stock
Min.: 1
Mult.: 1
Max.: 1

ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 539May Stock
Min.: 1
Mult.: 1
Max.: 5

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time 14 (na) Linggo
Min.: 1
Mult.: 1
Max.: 1

ISSI SRAM Pseudo SRAM 64Mb 2,170May Stock
Min.: 1
Mult.: 1
Max.: 127


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 1,611May Stock
Min.: 1
Mult.: 1
Max.: 2
Reel: 1,000

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp 285May Stock
Min.: 1
Mult.: 1
Max.: 12

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS 310May Stock
Min.: 1
Mult.: 1
Max.: 200

ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns 867May Stock
Min.: 1
Mult.: 1
Max.: 6

ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1,733May Stock
Min.: 1
Mult.: 1
Max.: 28

ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS 480May Stock
Min.: 1
Mult.: 1
Max.: 200

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 308May Stock
Min.: 1
Mult.: 1
Max.: 16

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885May Stock
Min.: 1
Mult.: 1
Max.: 37

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 656May Stock
Min.: 1
Mult.: 1
Max.: 121

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1,887May Stock
Min.: 1
Mult.: 1
Max.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 827May Stock
Min.: 1
Mult.: 1
Max.: 353

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 174May Stock
Min.: 1
Mult.: 1
Max.: 13

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 467May Stock
Min.: 1
Mult.: 1
Max.: 32

ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450May Stock
Min.: 1
Mult.: 1
Max.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 148May Stock
Min.: 1
Mult.: 1
Max.: 24

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 159May Stock
Min.: 1
Mult.: 1
Max.: 15

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4,821May Stock
Min.: 1
Mult.: 1
Max.: 491
Reel: 2,500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 1,601May Stock
Min.: 1
Mult.: 1
Max.: 719

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4,324May Stock
Min.: 1
Mult.: 1
Max.: 1,465
Reel: 2,500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 3,104May Stock
Min.: 1
Mult.: 1
Max.: 38
Reel: 2,500