Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Mga Resulta: 51
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS
ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS 106May Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 252May Stock
2,880Inaasahan 9/11/2026
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 202May Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 181May Stock
2,500Inaasahan 9/7/2026
Min.: 1
Mult.: 1
: 2,500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
480Inaasahan 10/5/2026
Min.: 1
Mult.: 1

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
471Inaasahan 8/28/2026
Min.: 1
Mult.: 1

ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
956Inoorder
Min.: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 1
Mult.: 1
: 2,500

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp Hindi Naka-stock
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v-1.95v,48 Ball BGA (6x8mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 480
Mult.: 480

ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,70ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WV1M16EBLL-55BLI
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 480
Mult.: 480

ISSI IS66WV1M16EBLL-55BLI-TR
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v-3.6v,48 Ball BGA, RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WVE2M16TCLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WVE2M16TCLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 480
Mult.: 480

ISSI IS66WVE2M16ECLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WVE4M16ECLL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WVE4M16EALL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500

ISSI IS66WVC2M16EALL-7010BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 2,500
Mult.: 2,500
: 2,500
ISSI IS66WVC2M16EALL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS Lead-Time para sa Hindi Naka-stock 24 (na) Linggo
Min.: 480
Mult.: 480