650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Mga Resulta: 29
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L 1,292May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 650V 1,263May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L 569May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 776May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L 430May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L 1,824May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L 3,923May Stock
Min.: 1
Mult.: 1
Reel: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L 1,595May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L 828May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L 428May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S 3,720May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S 399May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S 796May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S 700May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 650V 432May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 8 V, + 22 V 4.3 V 50 nC - 55 C + 175 C 129 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-3L 32MOHM 650V M3S 890May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 51 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S 732May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S 800May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S 411May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 67 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 245 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S 450May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L 334May Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 158May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L 395May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 874May Stock
Min.: 1
Mult.: 1
TO-247-4 EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-4L 384May Stock
Min.: 1
Mult.: 1

TO-247-4 EliteSiC