Power Silicon Carbide Schottky Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.

Mga Resulta: 16
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Kumpigurasyon If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Minimum na Operating Temperature Maximum na Operating Temperature Series
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 15 A 1.2 kV 1.36 V 75 A 200 uA - 55 C + 175 C VS-4C15ET12S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 16 A 650 V 1.3 V 101 A 94 uA - 55 C + 175 C VS-4C16ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/16/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/16/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 20 A 650 V 1.33 V 125 A 110 uA - 55 C + 175 C VS-4C20ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/6/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/16/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 SIngle 30 A 650 V 1.33 V 180 A 125 uA - 55 C + 175 C VS-4C30ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

TO-263AB-2 Single 30 A 1.2 kV 1.36 V 144 A 550 uA - 55 C + 175 C VS-4C30ET12S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/6/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 3/6/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 6 A 650 V 1.3 V 39 A 35 uA - 55 C + 175 C 4C06ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
780Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2L-M3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 8 A 650 V 1.3 V 51 A 41 uA - 55 C + 175 C 4C08ET07S2LHM3
Vishay Semiconductors SiC Schottky Diodes SiCG4D2PAK2L
800Inaasahan 8/14/2026
Min.: 1
Mult.: 1

SMD/SMT TO-263AB-2 Single 12 A 650 V 1.3 V 72 A 84 uA -55 C + 175 C VS-4C12ET07S2L-M3