Parallel Interface FeRAMs

RAMXEED Parallel Interface FeRAMs are FeRAM (Ferroelectric Random Access Memory) chips available in various bit configurations using ferroelectric and silicon gate CMOS process technologies. These devices can retain data without a backup battery, unlike SRAM. The memory cells in the RAMXEED Parallel Interface FeRAM can support 1014 read/write operations, a significant improvement over the read and write operations supported by Flash memory and E2PROM. These FeRAM devices use a pseudo-SRAM interface.

Mga Resulta: 6
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Laki ng Memory Uri ng Interface Organisasyon Package / Case Oras ng Pag-access Supply Voltage - Min Supply Voltage - Max Minimum na Operating Temperature Maximum na Operating Temperature Packaging
RAMXEED F-RAM 8Mbit FeRAM (1M x8) parallel interface - TSOP44 tray 25May Stock
Min.: 1
Mult.: 1

8 Mbit Parallel 1 M x 8 TSOP-44 65 ns 1.8 V 3.6 V - 40 C + 85 C Tray
RAMXEED F-RAM 8Mbit FeRAM (1M x8) parallel interface - FBGA48 tray
480Inaasahan 6/2/2026
Min.: 1
Mult.: 1

8 Mbit Parallel 1 M x 8 FBGA-48 65 ns 1.8 V 3.6 V - 40 C + 85 C Tray
RAMXEED F-RAM 8Mbit FeRAM (512k x16) parallel interface - FBGA48 tray
219Inaasahan 6/2/2026
Min.: 1
Mult.: 1

8 Mbit Parallel 512 k x 16 FBGA-48 65 ns 1.8 V 3.6 V - 40 C + 85 C Tray
RAMXEED F-RAM 8Mbit FeRAM (512k x16) parallel interface - TSOP44 tray
67Inaasahan 6/1/2026
Min.: 1
Mult.: 1

8 Mbit Parallel 512 k x 16 TSOP-44 65 ns 1.8 V 3.6 V - 40 C + 85 C Tray
RAMXEED F-RAM Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 126
Mult.: 126
4 Mbit 512 K x 8 TSOP-44 120 ns 1.8 V 3.6 V - 40 C + 105 C Tray
RAMXEED F-RAM Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Min.: 1
Mult.: 1
4 MB 256 K x 16 TSOP-44 120 ns 1.8 V 3.6 V - 40 C + 105 C Tray