MAGX-100027 50V GaN on Si HEMT Amplifiers

MACOM MAGX-100027 50V GaN on Si (Gallium Nitride on Silicon) HEMT (High-Electron-Mobility Transistor) Amplifiers are high-power devices optimized for DC to 2.7GHz frequency operation. The MAGX-100027 Amplifiers support both CW (Continuous Wave) and pulsed operation with peak output power levels from 15W to 300W. Each MACOM MAGX-100027 50V GaN device integrates a pair of isolated, symmetric amplifiers and is internally pre-matched.

Mga Resulta: 3
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Packaging
MACOM RF Amplifier Transistor,GaN,100W,CW
Datasheet
287May Stock
Min.: 1
Mult.: 1

0 Hz to 2.7 GHz 50 V 200 mA 18.5 dB General Purpose Amplifiers SMD/SMT TO-272S-2 GaN - 40 C + 85 C MAGX-100027 Bulk
MACOM RF Amplifier Amplifier,GaN,50W,CW
Datasheet
84May Stock
Min.: 1
Mult.: 1

0 Hz to 2.7 GHz 50 V 100 mA 16.8 dB General Purpose Amplifiers SMD/SMT TO-272S-2 GaN - 40 C + 120 C MAGX-100027 Bulk
MACOM RF Amplifier Amplifier, GaN DC to 2700MHz, 250pc T&R
Datasheet
Lead-Time para sa Hindi Naka-stock 28 (na) Linggo
Min.: 250
Mult.: 250
Reel: 250

0 Hz to 2.7 GHz 50 V 16.3 dB General Purpose Amplifiers SMD/SMT TO-252S-4 GaN - 40 C + 85 C MAGX-100027 Reel