T1GA26xx-SM Low Noise Amplifiers

Qorvo TGA26xx-SM Low Noise Amplifiers are fabricated on a 0.25um GaN on SiC process (TQGaN25). Covering 2GHz to 6GHz, the TGA26xx-SM Amplifiers typically provides >22dB small signal gain and 30dBm of OTOI with 1.0dB NF. In addition to the high electrical performance, this GaN amplifier also provides a high level of input power robustness. Able to survive a high level of input power without performance degradation, Qorvo TGA26xx-SM provides flexibility regarding receive chain protection, resulting in reduced board space. This device is ideal for radar and satellite communication applications.

Mga Resulta: 2
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Frequency ng Pagpapatakbo Supply Voltage ng Pagpapatakbo Supply Current ng Pagpapatakbo Gain Uri Isitilo ng Mounting Package / Case Teknolohiya P1dB - Compression Point Minimum na Operating Temperature Maximum na Operating Temperature Series Packaging
Qorvo RF Amplifier 9-10GHz 20W GaN PAE>40% SSG >34dB
700Inaasahan 4/10/2026
Min.: 1
Mult.: 1
Reel: 250

9 GHz to 10 GHz 20 V to 32 V 365 mA 34 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC - 40 C + 85 C TGA2624 Reel, Cut Tape
Qorvo RF Amplifier 9-10GHz 35W GaN PAE >42% SSG >30dB
N/A
Min.: 1
Mult.: 1

9 GHz to 10 GHz 28 V 290 mA 32.7 dB Power Amplifiers SMD/SMT QFN-22 GaN SiC 40 dBm - 40 C + 85 C TGA2622 Waffle