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STMicroelectronics Mga SiC MOSFET

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Mga Resulta: 11

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Brand = STMicroelectronics Pagpili sa Tab ng Larawan

Package / Case

Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

Kuwalipikasyon

I-reset Lahat

Maghanap sa loob ng mga resulta

May Stock

Karaniwang May Stock

Aktibo

Mga Bagong Produkto

Sumusunod sa RoHS

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# ng Piyesa

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

SCTW70N120G2V
STMicroelectronics
1: ₱1,604.86
714May Stock

Mfr. # ng Piyesa
SCTW70N120G2V

# ng Piyesa ng Mouser
511-SCTW70N120G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

Alamin Pa

Datasheet

714May Stock

₱1,604.86

₱1,213.94

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

91 A

21 mOhms

- 10 V, + 22 V

4.9 V

150 nC

- 55 C

+ 200 C

547 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

SCTW90N65G2V
STMicroelectronics
1: ₱1,126.94
47May Stock
600Inaasahan 4/20/2026

Mfr. # ng Piyesa
SCTW90N65G2V

# ng Piyesa ng Mouser
511-SCTW90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24

Alamin Pa

Datasheet

47May Stock

600Inaasahan 4/20/2026

₱1,126.94

₱1,058.50

₱1,011.52

₱1,001.08

Tingnan

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

90 A

25 mOhms

- 10 V, + 22 V

1.9 V

157 nC

- 55 C

+ 200 C

390 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

SCT1000N170
STMicroelectronics
1: ₱515.04
592May Stock

Mfr. # ng Piyesa
SCT1000N170

# ng Piyesa ng Mouser
511-SCT1000N170

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Alamin Pa

Datasheet

592May Stock

₱515.04

₱352.64

₱260.42

₱228.52

₱227.94

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V, + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

SCT20N120AG
STMicroelectronics
1: ₱922.20
510May Stock

Mfr. # ng Piyesa
SCT20N120AG

# ng Piyesa ng Mouser
511-SCT20N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

Alamin Pa

Datasheet

510May Stock

₱922.20

₱680.34

₱473.86

Tingnan

Min.: 1
Mult.: 1

Through Hole

N-Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V, + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: ₱997.60
593May Stock

Mfr. # ng Piyesa
SCTW40N120G2VAG

# ng Piyesa ng Mouser
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Alamin Pa

Datasheet

593May Stock

₱997.60

₱618.86

₱540.56

₱539.98

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H

SCTW100N65G2AG
STMicroelectronics
1: ₱1,486.54
317May Stock
NRND

Mfr. # ng Piyesa
SCTW100N65G2AG

# ng Piyesa ng Mouser
511-SCTW100N65G2AG

NRND

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H

Alamin Pa

Datasheet

317May Stock

₱1,486.54

₱1,318.92

₱1,305.00

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

100 A

69 mOhms

- 10 V, + 22 V

5 V

162 nC

- 55 C

+ 200 C

420 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

SCTWA90N65G2V-4
STMicroelectronics
1: ₱1,675.62
151May Stock

Mfr. # ng Piyesa
SCTWA90N65G2V-4

# ng Piyesa ng Mouser
511-SCTWA90N65G2V-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Alamin Pa

Datasheet

151May Stock

₱1,675.62

₱1,277.16

₱1,179.14

₱1,018.48

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

SCT10N120AG
STMicroelectronics
1: ₱532.44
844Inaasahan 11/23/2026

Mfr. # ng Piyesa
SCT10N120AG

# ng Piyesa ng Mouser
511-SCT10N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an

Alamin Pa

Datasheet

844Inaasahan 11/23/2026

₱532.44

₱301.60

₱239.54

₱238.96

Min.: 1
Mult.: 1

Through Hole

N-Channel

1 Channel

1.2 kV

12 A

500 mOhms

- 10 V, + 25 V

3.5 V

22 nC

- 55 C

+ 200 C

150 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247

SCTWA90N65G2V
STMicroelectronics
1: ₱1,637.34
69Inaasahan 5/4/2026

Mfr. # ng Piyesa
SCTWA90N65G2V

# ng Piyesa ng Mouser
511-SCTWA90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247

Alamin Pa

Datasheet

69Inaasahan 5/4/2026

₱1,637.34

₱1,060.82

₱1,015.00

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

650 V

119 A

24 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 200 C

565 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

SCT018W65G3AG
STMicroelectronics
600: ₱610.74
Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Bagong Produkto

Mfr. # ng Piyesa
SCT018W65G3AG

# ng Piyesa ng Mouser
511-SCT018W65G3AG

Bagong Produkto

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A

Datasheet

Lead-Time para sa Hindi Naka-stock 17 (na) Linggo

₱610.74

Min.: 600
Mult.: 600

Through Hole

HiP247-3

N-Channel

1 Channel

650 V

55 A

27 mOhms

-10 V, 22 V

4.2 V

76 nC

- 55 C

+ 200 C

398 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3
STMicroelectronics
600: ₱749.94
Hindi Naka-stock
Bagong Produkto

Mfr. # ng Piyesa
SCT040W120G3

# ng Piyesa ng Mouser
511-SCT040W120G3

Bagong Produkto

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Datasheet

Hindi Naka-stock

₱749.94

Quote

Min.: 600
Mult.: 600

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

-10 V, 22 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

STMicroelectronics Mga SiC MOSFET

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