DTMOSIV Mga MOSFET

Mga Resulta: 112
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal Packaging
Toshiba MOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=100W F=1MHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 11.5 A 340 mOhms - 30 V, 30 V 2.7 V 25 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1
Reel: 75

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 11.5 A 265 mOhms - 30 V, 30 V 3.7 V 25 nC - 55 C + 150 C 100 W DTMOSIV Reel, Cut Tape
Toshiba MOSFETs N-Ch DTMOSIV 600 V 104W 890pF 11.5A Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 11.5 A 300 mOhms 104 W DTMOSIV Reel
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs MOSFET NChannel 0.22ohm DTMOS Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 3.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1,000
Mult.: 1,000
Reel: 1,000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel

Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DTMOS DFN8x8-OS PD=139W F=1MHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 13.7 A 280 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 180 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1,000
Mult.: 1,000
Reel: 1,000

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel
Toshiba MOSFETs TO-3PN(OS) PD=130W 1MHz PWR MOSFET TRNS Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 4.5 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC Hindi Naka-stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV
Toshiba MOSFETs N-Ch DTMOSIV 600 V 139W 1350pF 15.8A Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 139 W DTMOSIV Reel
Toshiba MOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS Lead-Time para sa Hindi Naka-stock 32 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 230 mOhms - 30 V, 30 V 4.5 V 50 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFETs DFN8x8-OS PD=156W 1MHz PWR MOSFET TRNS Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN-5 N-Channel 1 Channel 650 V 17.3 A 210 mOhms - 30 V, 30 V 3.5 V 45 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch DTMOSIV 600 V 156W 1680pF 20A Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 170 mOhms - 30 V, 30 V 2.7 V 48 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220AB PD=230W F=1MHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 27.6 A 110 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube

Toshiba MOSFETs Power MOSFET N-Channel Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 27.6 A 94 mOhms - 30 V, 30 V 2.5 V 75 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs Pb-F POWER MOSFET TRANSISTOR DFN 8 8 PD=240W F=1MHZ Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 5,000
Mult.: 5,000
Reel: 5,000

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 650 V 27.6 A 140 mOhms - 30 V, 30 V 3 V 90 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel
Toshiba MOSFETs DFN8x8-OS PD=240W 1MHz PWR MOSFET TRNS Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN-5 N-Channel 1 Channel 650 V 27.6 A 120 mOhms - 30 V, 30 V 3.5 V 75 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel
Toshiba MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 105nC Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFETs N-Ch 30.8A 230W FET 600V 3000pF 86nC Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 30.8 A 88 mOhms - 30 V, 30 V 105 nC 230 W DTMOSIV Tube
Toshiba MOSFETs N-Ch DTMOSIV 600 V 240W 3000pF 30.8A Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 2,500
Mult.: 2,500
Reel: 2,500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 78 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 240 W Enhancement DTMOSIV Reel