CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

Mga Resulta: 45
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,467May Stock
1,500Inoorder
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 403 A 10.4 mOhms - 10 V, 25 V 5.1 V 348 nC - 55 C + 175 C 1.5 kW Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 188May Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 215May Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 182May Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 N-Channel 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 5May Stock
960Inoorder
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 565May Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling 465May Stock
3,000Inaasahan 9/10/2026
Min.: 1
Mult.: 1
: 750

CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,798May Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,440May Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 330May Stock
750Inaasahan 11/5/2026
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 846May Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 692May Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 670May Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 199May Stock
750Inaasahan 11/19/2026
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 105May Stock
240Inaasahan 9/17/2026
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 341May Stock
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 352May Stock
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2 615May Stock
240Inaasahan 11/5/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2 554May Stock
240Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,387May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2 197May Stock
240Inoorder
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2 961May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2 687May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 902May Stock
2,000Inoorder
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3,134May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement