GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

Mga Resulta: 32
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Minimum na Operating Temperature Maximum na Operating Temperature Maximum na Operating Frequency Minimum na Operating Frequency Teknolohiya
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 60 Watt

SMD/SMT Die N-Channel 4 Channel 120 V 6 A 250 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-18GHz, 70 Watt

SMD/SMT Die N-Channel 1 Channel 100 V 6 A 200 mOhms - 3 V + 225 C 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT Die DC-4.0GHz, 320 Watt

SMD/SMT Die N-Channel 50 V 4 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT Die DC-18GHz, 25 Watt

SMD/SMT Die N-Channel 4 Channel 100 V 2 A 600 mOhms - 3 V 18 GHz 10 MHz GaN
MACOM GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt
17May Stock
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 150 V 12 A - 3 V - 40 C + 150 C 3.5 GHz 3.1 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 6 Watt 937May Stock
Min.: 1
Mult.: 1

SMD/SMT 440109 N-Channel 120 V 750 mA - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 6 Watt 896May Stock
1,800Inoorder
Min.: 1
Mult.: 1
: 200

SMD/SMT QFN-6 N-Channel 120 V 750 mA - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 10 Watt 2,261May Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 25 Watt 767May Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 3 A - 3 V - 40 C + 150 C 6 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 45 Watt 87May Stock
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 6 A - 3 V - 40 C + 150 C 4 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 120 Watt 74May Stock
175Inoorder
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 12 A - 3 V - 40 C + 150 C 2.5 GHz 1 GHz GaN
MACOM GaN FETs GaN HEMT 4.5-6.0GHz, 10 Watt 141May Stock
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 120 V 1.5 A - 3 V - 40 C + 150 C 6 GHz 4.5 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 8 Watt 570May Stock
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 120 V 750 mA 1.6 Ohms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 100 Watt 47May Stock
225Inaasahan 10/16/2026
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 150 V 8.7 A 2.3 V - 40 C + 150 C 2.5 GHz 500 MHz GaN
MACOM GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt 14May Stock
Min.: 1
Mult.: 1

SMD/SMT 1 Channel 125 V - 3 V - 40 C + 85 C 5.9 GHz 5.2 GHz GaN
MACOM GaN FETs GaN HEMT DC-4.0GHz, 35 Watt 5May Stock
752Inoorder
Min.: 1
Mult.: 1

Screw Mount 440193 N-Channel 120 V 4.5 A - 3 V - 40 C + 150 C 4 GHz 2 GHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 180 Watt
21Inaasahan 9/25/2026
Min.: 1
Mult.: 1

Screw Mount 440199 N-Channel 2 Channel 120 V 24 A - 3 V - 40 C + 150 C 2.5 GHz 1 GHz GaN
MACOM GaN FETs GaN HEMT DC-18GHz, 6 Watt
750Inaasahan 9/15/2026
Min.: 1
Mult.: 1
: 250

SMD/SMT DFN-12 N-Channel 100 V 950 mA - 3 V - 40 C + 150 C 18 GHz 0 Hz GaN
MACOM GaN FETs GaN HEMT DC-6.0GHz, 30 Watt 318May Stock
350Inaasahan 8/28/2026
Min.: 1
Mult.: 1

Screw Mount 440166 N-Channel 100 V 4.2 A 2.3 V - 40 C + 150 C 1.4 GHz 960 MHz GaN
MACOM GaN FETs GaN HEMT DC-2.5GHz, 90 Watt Lead-Time 26 (na) Linggo
Min.: 1
Mult.: 1

Screw Mount 440199 N-Channel 2 Channel 120 V 12 A - 3 V - 40 C + 150 C 2.5 GHz 500 MHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 15 Watt Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 100
Mult.: 10

SMD/SMT Die N-Channel 120 V 1.5 A 1 Ohms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 30 Watt Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 10
Mult.: 10

SMD/SMT Die N-Channel 2 Channel 120 V 3 A 500 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT Die DC-6.0GHz, 120 Watt

SMD/SMT Die N-Channel 8 Channel 120 V 12 A 100 mOhms - 3 V 6 GHz 4 GHz GaN
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1
Mult.: 1

Screw Mount 440162 N-Channel 150 V 18 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN
MACOM GaN FETs GaN HEMT 1.2-1.4GHz, 500 Watt Lead-Time 26 (na) Linggo
Min.: 1
Mult.: 1

Screw Mount 440117 N-Channel 150 V 36 A - 3 V - 40 C + 130 C 1.4 GHz 1.2 GHz GaN