Infineon Technologies 600V & 1200V Trenchstop™ Performance Series IGBTs
Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs (Insulated-Gate Bipolar Transistors) combine Trench top-cell and field stop concept leads to significantly improved static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.
The Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs are offered in TO-220-3, TO-247-3, TO-252-3, and TO-263-3 packages and are Pb-free and RoHS compliant.
Features
- Better performance: Lower switching losses, lower diode recovery losses
- Low-speed dV/dt switching (<5V/ns), easy design
- 5µs SC rating
- Very low VCEsat
- Low EMI
- Low turn-off losses
- Short tail current
- Cost competitive
- +175°C maximum junction temperature
- Qualified according to JEDEC for target applications
- Pb-free lead plating
- RoHS compliant
Applications
- Uninterruptible power supplies
- Drives
- Solar inverters
- Converters with medium switching frequency
Resources
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Inilathala: 2016-05-23
| Na-update: 2022-03-11