MACOM CGHV40200PP GaN HEMT
MACOM CGHV40200PP Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) operates from a 50V rail and offers a broadband solution to RF and microwave applications. This transistor provides high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. MACOM CGHV40200PP GaN HEMT is available in a 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.
Features
- Up to 2.7GHz operation
- 21dB small signal gain at 1.8GHz
- 250W typical Psat
- 50V operation
Applications
- 2-way private radio
- Broadband amplifiers
- Radar amplifiers
- Test instrumentation
- Class A, AB, and linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
Specifications
- 200W power output
- 125V drain-source voltage at +25°C
- +225°C operating junction temperature
- +245°C soldering temperature
Inilathala: 2017-09-26
| Na-update: 2024-01-22