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GeneSiC Semiconductor MURT400x Silicon Super Fast Recovery Diodes

GeneSiC Semiconductor MURT400x silicon super fast recovery diodes provide high surge capability and repetitive peak reverse voltage of up to 600V. GeneSiC MURT400x silicon super fast recovery diodes come in a three tower package and feature continuous forward current of 400A. These GeneSiC Semiconductor silicon super fast recovery diodes provide an operating temperature of -40ºC to +175°C.

Features

  • High surge capability
  • Three tower isolation type package
  • Types from 400V to 600V VRRM
  • Electrically isolated base plate
  • Not ESD sensitive
  • -55°C to +150°C Operating temperature range

Typical Application

Application Circuit Diagram - GeneSiC Semiconductor MURT400x Silicon Super Fast Recovery Diodes
View Results ( 8 ) Page
Numero ng Piyesa Vr - Reverse Voltage Vf - Forward Voltage
MURTA40060 600 V 1.7 V
MURT40010 100 V 1.3 V
MURT40010R 100 V 1.3 V
MURT40020 200 V 1.3 V
MURT40020R 200 V 1.3 V
MURT40040 400 V 1.35 V
MURT40040R 400 V 1.35 V
MURTA40060R 600 V 1.7 V
Inilathala: 2011-01-04 | Na-update: 2024-12-13