STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs
STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.
Features
- AEC-Q101 qualified
- Very high operating temperature capability (TJ = +200°C)
- Very fast and robust intrinsic body diode
- Low capacitance
Applications
- Traction for inverters
- DC-DC converters for EV/HEV
- On Board Chargers (OBCs)
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STMicroelectronics Silicon Carbide Power MOSFETs
Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.
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| Numero ng Piyesa | Datasheet | Package / Case | Paglalarawan |
|---|---|---|---|
| SCT016H120G3AG |  |
H2PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package |
| SCT011HU75G3AG | |
HU3PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package |
| SCT012W90G3-4AG | |
HiP247-3 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package |
| SCT020HU120G3AG | |
HU3PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package |
| SCT020W120G3-4AG | |
Hip247-4 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package |
| SCT025W120G3AG | |
HiP247-3 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package |
| SCT040HU120G3AG | |
HU3PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package |
| SCT025H120G3AG | |
H2PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package |
| SCT012H90G3AG | |
H2PAK-7 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package |
| SCT040W120G3AG | |
HiP-247-3 | SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package |