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Toshiba GT20N135SRA Silicon N-Channel IGBT

Toshiba GT20N135SRA Silicon N-Channel IGBT is a 6.5th generation IGBT and consists of a Freewheeling Diode (FWD) monolithically integrated with an IGBT chip. This IGBT features a low saturation voltage of 1.60V and operates at a maximum of 175°C high junction temperature and 0.25µs of high-speed switching. The GT20N135SRA Silicon N-Channel IGBT is ideal for voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.

Features

  • 6.5th generation
  • Enhancement mode
  • Freewheeling Diode (FWD) monolithically integrated with an IGBT chip

Specifications

  • Low saturation voltage
    • VCE(sat)=1.60V (typical)
    • IC=20A
    • Ta=25°C
  • High-speed switching of IGBT tf=0.25µs (typical)
  • High junction temperature of Tj=175°C (max)

Applications

  • Voltage-resonant inverter switching
  • Soft switching
  • Induction cooktops and home appliances

Package Dimensions

Mechanical Drawing - Toshiba GT20N135SRA Silicon N-Channel IGBT
Inilathala: 2020-03-01 | Na-update: 2024-11-08