Vishay / Siliconix SiJK5100E N-Channel MOSFET
Vishay / Siliconix SiJK5100E N-Channel MOSFET is a TrenchFET® Gen V power MOSFET with 100V drain-source voltage. This MOSFET features 536W maximum power dissipation at +25°C, 487A continuous source-drain diode current at +25°C, and a single configuration. The SiJK5100E is UIS tested, lead free, and halogen free. Vishay / Siliconix SiJK5100E N-Channel MOSFET operates within a -55°C to +175°C temperature range. Typical applications include synchronous rectification, automation, power supplies, motor drive control, and battery management.
Features
- TrenchFET Gen V power MOSFET
- Leadership RDS(on) minimizes power loss from conduction
- Enhance power dissipation and lower RthJC
- 100% Rg and UIS tested
- Standard level FET
- Single configuration
- Available in PowerPAK® 10 x 12 package
- Lead-free and halogen-free
Specifications
- 100V drain-source voltage
- 536W maximum power dissipation at +25°C
- 487A continuous source-drain diode current at +25°C
- ±20V gate-source voltage
- 700A pulsed drain current (t = 100μs)
- -55°C to +175°C operating temperature range
Applications
- Synchronous rectification
- Automation
- Power supplies
- Motor drive control
- Battery management
Infographic
Output Characteristics
Additional Resources
Inilathala: 2024-10-29
| Na-update: 2025-02-07