Toshiba 650V DTMOS-VI Superjunction MOSFETs
Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.
Features
- Low drain-source on-resistance
- High-speed switching properties with lower capacitance
- Enhancement mode of Vth = 3V to 4V (VDS = 10V)
Specifications
- ±1µA maximum gate leakage current
- Input capacitances (CISS) are 2250pF, 1635pF, and 1370pF
- 3V to 4V maximum gate threshold voltage
Related Product
Toshiba DTMOSVI MOSFETs
650V power MOSFET featuring a low drain-source on-resistance of 0.033Ω (typical).
DFN 8x8 Mechanical Drawing (mm)
TO-220SIS Mechanical Drawing (mm)
View Results ( 7 ) Page
| Numero ng Piyesa | Datasheet | Paglalarawan | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Pd - Power Dissipation |
|---|---|---|---|---|---|---|
| TK125V65Z,LQ |  |
MOSFETs MOSFET 650V 125mOhms DTMOS-VI | 24 A | 125 mOhms | 40 nC | 190 W |
| TK170V65Z,LQ | |
MOSFETs MOSFET 650V 170mOhms DTMOS-VI | 18 A | 170 mOhms | 29 nC | 150 W |
| TK110N65Z,S1F | |
MOSFETs MOSFET 650V 110mOhms DTMOS-VI | 24 A | 110 mOhms | 40 nC | 190 W |
| TK155A65Z,S4X | |
MOSFETs MOSFET 650V 155mOhms DTMOS-VI | 18 A | 155 mOhms | 23 nC | 40 W |
| TK190A65Z,S4X | |
MOSFETs MOSFET 650V 190mOhms DTMOS-VI | 15 A | 190 mOhms | 25 nC | 40 W |
| TK110A65Z,S4X | |
MOSFETs MOSFET 650V 110mOhms DTMOS-VI | 24 A | 110 mOhms | 40 nC | 45 W |
| TK210V65Z,LQ | |
MOSFETs MOSFET 650V 210mOhms DTMOS-VI | 15 A | 210 mOhms | 25 nC | 130 W |
Inilathala: 2020-11-23
| Na-update: 2024-11-26