Toshiba U-MOSVII-H MOSFETs
Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.
Features
- Logic-level gate drive and low-voltage gate drive
- N-channel polarity
- 0.018Ω to 4.7Ω (@VGS = 4.5V) maximum drain-source ON-resistance (RDS(ON))
- 12V to 60V drain-source voltage (VDSS)
- ±12V to ±20V gate-source voltage (VGSS)
- 0.15m to 9.0A drain current
- 0.15W to 1.6W power dissipation
- 11pF to 620pF input capacitance
- -55°C to +150°C operating temperature range
- SMD/SMT
Applications
- Mobile devices
- Load switches
- IoT devices
- High-speed switching
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
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