Toshiba U-MOSIII MOSFETs
Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.
Features
- Logic-level gate drive
- 0.0135Ω to 6.0Ω (@VGS = -2.5V) maximum drain-source on-resistance (RDS(ON))
- -20V to +30V drain-source voltage (VDSS)
- ±8V to ±10V gate-source voltage (VGSS)
- -14A to 4.2A drain current (ID)
- 0.1W to 1.25W power dissipation (PD)
- 12pF to 3350pF input capacitance (CISS)
Applications
- Switching voltage regulators
- DC-DC converters
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
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