Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Mga Resulta: 30
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLL 351May Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT TOLL-10 N-Channel 1 Channel 650 V 55.7 A 41 mOhms 4.8 V 24.5 nC - 55C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLT 1,428May Stock
Min.: 1
Mult.: 1
Reel: 1,300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L 698May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in TO220 840May Stock
Min.: 1
Mult.: 1
Reel: 1,000

Through Hole TO-220-3 N-Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 3.65 V 14.4 nC - 55 C + 150 C 65.8 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L 601May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 132 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2,674May Stock
Min.: 1
Mult.: 1
Reel: 3,000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2,518May Stock
Min.: 1
Mult.: 1
Reel: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.6 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TO220 1,216May Stock
Min.: 1
Mult.: 1
Reel: 1,000

Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.7 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLT 1,696May Stock
Min.: 1
Mult.: 1
Reel: 1,300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 3,773May Stock
Min.: 1
Mult.: 1
Reel: 4,000

SMD/SMT QFN-7 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 10 V, + 10 V 2.8 V 5 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in TO220 836May Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 1,685May Stock
Min.: 1
Mult.: 1
Reel: 4,000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 18 V, + 18 V 2.8 V 9 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 1,200
Mult.: 1,200

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46.5 A 41 mOhms - 20 V, + 20 V 3.6 V 42.7 nC - 55 C + 150 C 156 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 34 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 119 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLL Lead-Time para sa Hindi Naka-stock 16 (na) Linggo
Min.: 2,000
Mult.: 2,000
Reel: 2,000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 29 A 60 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 4.1 V 14.4 nC - 55 C + 150 C Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 5,000
Mult.: 5,000
Reel: 5,000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 1
Mult.: 1
Reel: 3,000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 5,000
Mult.: 5,000
Reel: 5,000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 5,000
Mult.: 5,000
Reel: 5,000

700 V SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 3,000
Mult.: 3,000
Reel: 3,000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 14.2 A 180 mOhms 20 V 2 V 14 nC - 55 C + 150 C 62.5 W Enhancement SuperGaN